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| Preliminary data SPI70N10L SPP70N10L,SPB70N10L Feature SIPMOS =Power-Transistor N-Channel Enhancement mode Logic Level 175C operating temperature Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS RDS(on) ID 100 16 70 P-TO220-3-1 V m A Type SPP70N10L SPB70N10L SPI70N10L Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67040-S4175 Q67040-S4170 Q67060-S7428 Marking 70N10L 70N10L 70N10L Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TC=25C TC=100C Symbol ID Value 70 50 Unit A Pulsed drain current TC=25C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Page 1 280 700 25 6 20 250 -55... +175 55/175/56 2001-08-24 kV/s V W C mJ Avalanche energy, single pulse ID =70 A , VDD =25V, RGS =25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =70A, VDS =0V, di/dt=200A/s Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) SPI70N10L SPP70N10L,SPB70N10L Symbol min. RthJC RthJA RthJA - Values typ. max. 0.6 62.5 62 40 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =2mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 100 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = VDS ID = 2 mA Zero gate voltage drain current VDS =100V, VGS =0V, Tj =25C VDS =100V, VGS =0V, Tj =150C A 0.1 10 14 10 1 100 100 25 16 nA m Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=50A Drain-source on-state resistance VGS =10V, ID =50A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2001-08-24 Preliminary data SPI70N10L SPP70N10L,SPB70N10L Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics ID =50A Symbol Conditions min. Values typ. 65 3630 640 345 70 250 250 95 max. 4540 800 430 105 375 375 145 Unit Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) tr td(off) tf VGS =0V, VDS =25V, f=1MHz VDD =50V, VGS=4.5V, ID =70A, RG =1.3 Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =140A VR =50V, IF =lS , diF /dt=100A/s Qgs Qgd Qg VDD =80V, ID =70A VDD =80V, ID =70A, VGS =0 to 10V V(plateau) VDD =80V, ID=70A IS ISM TC=25C Page 3 Transconductance gfs VDS 2*ID *RDS(on)max , 30 - S pF ns - 10 34 160 3.22 15 51 240 - nC V - 1.2 100 600 70 280 1.8 150 900 A V ns nC 2001-08-24 Preliminary data 1 Power dissipation Ptot = f (TC ) 280 SPP70N10L SPI70N10L SPP70N10L,SPB70N10L 2 Drain current ID = f (TC ) parameter: VGS 10 V 75 SPP70N10L W A 240 220 200 60 55 Ptot ID 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 C 190 50 45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 C 190 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 C 10 3 SPP70N10L 4 Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T K/W 10 1 SPP70N10L A tp = 18.0s 10 0 10 2 Z thJC 10 -1 ID 100 s /I D =V 10 -2 DS 10 1 DS (on ) 1 ms 10 -3 R 10 ms 10 -4 single pulse DC 10 0 -1 10 10 -5 -7 10 10 0 10 1 10 2 V 10 3 10 -6 VDS Page 4 TC D = 0.50 0.20 0.10 0.05 0.02 0.01 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2001-08-24 Preliminary data 5 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 80 s 170 SPP70N10L SPI70N10L SPP70N10L,SPB70N10L 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 80 SPP70N10L Ptot = 250W ki l j hg f VGS [V] a b A e b c d m 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 140 120 c dd e f g RDS(on) 60 ID 100 80 60 40 20 a 50 h 40 c i j k l 30 b 20 10 VGS [V] = b 3.0 c 3.5 e f gh ij kl d 4.0 e f 4.5 5.0 g 5.5 h i 6.0 6.5 j 7.0 k l 8.0 10.0 0 0 1 2 3 4 V 5.5 0 0 20 40 60 80 100 A 130 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s 70 A 60 55 50 8 Typ. forward transconductance gfs = f(ID ); Tj=25C parameter: gfs 60 S g fs V ID 45 40 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 5 50 45 40 35 30 25 20 15 10 5 0 0 10 20 30 40 A 55 VGS ID Page 5 2001-08-24 Preliminary data 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 50 A, VGS = 4.5 V 110 SPP70N10L SPI70N10L SPP70N10L,SPB70N10L 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = 2 mA 3 V m 90 2.4 RDS(on) V GS(th) 80 70 60 50 40 30 20 typ 10 0 -60 -20 20 60 100 140 C 2.2 2 1.8 1.6 1.4 1.2 max 98% 1 0.8 0.6 0.4 0.2 200 0 -60 -20 20 60 100 140 C min typ 200 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s 10 3 SPP70N10L A pF Ciss 10 2 C 10 3 Coss Crss IF 10 1 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 5 10 15 20 25 30 V 40 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS VSD Page 6 2001-08-24 Preliminary data 13 Typ. avalanche energy EAS = f (Tj ) 700 SPI70N10L SPP70N10L,SPB70N10L 14 Typ. gate charge VGS = f (QGate ) parameter: ID = 70 A pulsed 16 SPP70N10L mJ 600 550 12 E AS 500 450 400 350 300 250 200 150 100 50 0 25 45 65 85 105 125 145 6 8 VGS C 185 Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) 120 SPP70N10L V V (BR)DSS 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 C Tj Page 7 200 par.: ID = 70 A , VDD = 25 V, RGS = 25 V 10 0,2 VDS max 0,8 VDS max 4 2 0 0 40 80 120 160 200 nC 280 QGate 2001-08-24 Preliminary data SPI70N10L SPP70N10L,SPB70N10L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP70N10L, BSPB70N10L and BSPI70N10L, for simplicity the device is referred to by the term SPP70N10L, SPB70N10L and SPI70N10L throughout this documentation Page 8 2001-08-24 |
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